Title: Achieving High Field-Effect Mobility in Amorphous Indium-Gallium-Zinc Oxide by Capping a Strong Reduction Layer
Authors: Zan, Hsiao-Wen
Yeh, Chun-Cheng
Meng, Hsin-Fei
Tsai, Chuang-Chuang
Chen, Liang-Hao
物理研究所
光電工程學系
Institute of Physics
Department of Photonics
Keywords: high mobility;oxide semiconductors;thin film transistors;defect reduction;oxygen deficiency
Issue Date: 10-Jul-2012
URI: http://hdl.handle.net/11536/16435
ISSN: 0935-9648
Journal: ADVANCED MATERIALS
Volume: 24
Issue: 26
End Page: 3509
Appears in Collections:Articles


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