標題: Achieving High Field-Effect Mobility in Amorphous Indium-Gallium-Zinc Oxide by Capping a Strong Reduction Layer
作者: Zan, Hsiao-Wen
Yeh, Chun-Cheng
Meng, Hsin-Fei
Tsai, Chuang-Chuang
Chen, Liang-Hao
物理研究所
光電工程學系
Institute of Physics
Department of Photonics
關鍵字: high mobility;oxide semiconductors;thin film transistors;defect reduction;oxygen deficiency
公開日期: 10-七月-2012
URI: http://hdl.handle.net/11536/16435
ISSN: 0935-9648
期刊: ADVANCED MATERIALS
Volume: 24
Issue: 26
結束頁: 3509
顯示於類別:期刊論文


文件中的檔案:

  1. 000305943900007.pdf