標題: Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Crown-Shaped Patterned Sapphire Substrates
作者: Chiu, Ching-Hsueh
Hsu, Lung-Hsing
Lee, Chia-Yu
Lin, Chien-Chung
Lin, Bo-Wen
Tu, Shang-Ju
Chen, Yan-Hao
Liu, Che-Yu
Hsu, Wen-Ching
Lan, Yu-Pin
Sheu, Jinn-Kong
Lu, Tien-Chang
Chi, Gou-Chung
Kuo, Hao-Chung
Wang, Shing-Chung
Chang, Chun-Yen
光電系統研究所
電子工程學系及電子研究所
光電工程學系
Institute of Photonic System
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
關鍵字: Epitaxial lateral overgrowth;light-emitting diodes;metal-organic chemical vapor deposition
公開日期: 15-七月-2012
摘要: In this letter, we report the high performance GaN-based light-emitting diodes (LEDs) with embedded air void array grown by metal-organic chemical vapor deposition. The donut-shaped air void was formed at the interface between crown-shaped patterned sapphire substrates (CPSS) and the GaN epilayer by conventional photolithography. The transmission electron microscopy images demonstrate that the threading dislocations were significantly suppressed by epitaxial lateral overgrowth (ELOG). The Monte Carlo ray-tracing simulation reveals that the light extraction of the air-voids embedded LED was dramatically increased due to a strong light reflection and redirection by the air voids.
URI: http://hdl.handle.net/11536/16430
ISSN: 1041-1135
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 24
Issue: 14
結束頁: 1212
顯示於類別:期刊論文


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  1. 000305325600001.pdf