Title: Growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition using SiH4/CH4/H-2
Authors: Liu, CC
Lee, CP
Cheng, KL
Cheng, HC
Yew, TR
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Issue Date: 1-Dec-1995
Abstract: SiC films were deposited on Si(100) substrates by electron cyclotron resonance chemical vapor deposition at 500 degrees C using SiH4/CH4/H-2 gas mixtures. The chemical composition and crystalline microstructure were investigated by x-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy, respectively. The film composition and microstructure are correlated to process variables. The deposition mechanism which controls the film characteristics is presented.
URI: http://hdl.handle.net/11536/1643
ISSN: 0013-4651
Journal: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 142
Issue: 12
Begin Page: 4279
End Page: 4284
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