標題: Room-Temperature Electro-Luminescence of Type-II GaSb/GaAs Quantum Rings
作者: Lin, Wei-Hsun
Lin, Meng-Yu
Wu, Shung-Yi
Lin, Shih-Yen
光電工程學系
Department of Photonics
關鍵字: GaSb quantum rings (QR);light-emitting diodes (LEDs)
公開日期: 15-七月-2012
摘要: The influence of Sb/background As flux ratios on GaSb nano-structures is investigated in this letter. With decreasing Sb/background As flux ratios under high Sb irradiation during the post soaking procedure, ring formation, photoluminescence (PL) intensity enhancement, and PL peak red shift are observed. With further reduced Sb flux and Sb/background As ratios, the observed more intense PL intensities of the quantum-ring (QR) samples compared with quantum dots suggest that more electron-hole wave function overlapping is obtained. The observation of room-temperature electro-luminescence of a QR PIN diode has revealed the potential of the nano-structure in light-emitting device application.
URI: http://hdl.handle.net/11536/16429
ISSN: 1041-1135
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 24
Issue: 14
結束頁: 1203
顯示於類別:期刊論文


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  1. 000305254000011.pdf