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dc.contributor.authorWong, Yuen-Yeeen_US
dc.contributor.authorHuang, Wei-Chingen_US
dc.contributor.authorTrinh, Hai-Dangen_US
dc.contributor.authorYang, Tsung-Hsien_US
dc.contributor.authorChang, Jet-Rungen_US
dc.contributor.authorChen, Michealen_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2014-12-08T15:23:27Z-
dc.date.available2014-12-08T15:23:27Z-
dc.date.issued2012-08-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://hdl.handle.net/11536/16424-
dc.description.abstractAlGaN/GaN structures were regrown on GaN templates using plasma- assisted molecular beam epitaxy (PA-MBE). Prior to the regrowth, nitridation was performed using nitrogen plasma in the MBE chamber for different durations (0 min to 30 min). Direct-current measurements on high-electron-mobility transistor devices showed that good pinch-off characteristics and good interdevice isolation were achieved for samples prepared with a 30-min nitridation process. Current-voltage measurements on Schottky barrier diodes also revealed that, for samples prepared without nitridation, the reverse-bias gate leakage current was approximately two orders of magnitudes larger than that of samples prepared with a 30-min nitridation process. The improvement in the electrical properties is a result of contaminant removal at the regrowth interface which may be induced by the etching effect of nitridation.en_US
dc.language.isoen_USen_US
dc.subjectAlGaN/GaNen_US
dc.subjectnitridationen_US
dc.subjectregrowth interfacesen_US
dc.subjectmolecular beam epitaxyen_US
dc.titleEffect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templatesen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume41en_US
dc.citation.issue8en_US
dc.citation.epage2139en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000305748700015-
dc.citation.woscount2-
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