標題: Modeling, Analysis, and TCAD of Nanoscale Devices and Circuits
作者: Chuang, Ching-Te
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2009
摘要: This paper discusses the challenges in the modeling, analysis, and TCAD of nanoscale devices and circuits. Compact modeling of gate-oxide related long term degradations, and quantum mechanical and nanoscale effects are addressed. Atomistic simulations and mixed-mode simulations based on fundamental physics for evaluation and exploration of emerging devices and circuits are illustrated. Automated migration to non-planar FinFET device structure is discussed. Fast Monte Carlo algorithm to enable statistical analysis of large scale circuits and memories, and to speed up TCAD computational efficiency is elaborated. The needs for phonon Boltzmann Transport based, coupled self-consistent electro-thermal solver/analysis, and full-band Monte Carlo electron-phonon interaction analysis for accurate prediction of self-heating in devices with ultra-thin silicon film are discussed.
URI: http://hdl.handle.net/11536/16411
ISBN: 978-1-4244-3827-3
期刊: ISCAS: 2009 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-5
起始頁: 2305
結束頁: 2308
顯示於類別:會議論文