標題: Characteristics of 4H-SiC RF MOSFETs on a Semi-insulating Substrate
作者: Wu, Tian-Li
Huang, Chih-Fang
Cheng, Chun-Hu
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2011
摘要: This study has provided considerable insight into the impact of device down scaling on the characteristics of RF devices. This type of RF devices, featuring a thin p-layer based on a semi-insulating substrate, is free from the unwanted parasitic effects resulting from traditional conducting substrates. We fabricated 4H-SiC RF MOSFETs with f(T)/f(MAX) of 0.7/1.5 GHz and, in so doing, identified the key issues associated with short channel effects, influencing device mobility and the RF characteristics of RF MOSFETs on a semi-insulating substrate.
URI: http://hdl.handle.net/11536/16395
ISBN: 978-1-60768-217-2
ISSN: 1938-5862
期刊: WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 12
Volume: 35
Issue: 6
結束頁: 173
Appears in Collections:Conferences Paper