Full metadata record
DC FieldValueLanguage
dc.contributor.authorWang, CJen_US
dc.contributor.authorFeng, MSen_US
dc.contributor.authorChan, SHen_US
dc.contributor.authorWu, JWen_US
dc.contributor.authorChang, CYen_US
dc.contributor.authorSze, SMen_US
dc.date.accessioned2014-12-08T15:03:03Z-
dc.date.available2014-12-08T15:03:03Z-
dc.date.issued1995-12-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.34.6321en_US
dc.identifier.urihttp://hdl.handle.net/11536/1638-
dc.description.abstractWe have investigated the effects of rapid thermal annealing on the Si delta-doped GaInP. The spatial localization of carriers was derived and used to determine the diffusion coefficient of Si in GaInP by the capacitance-voltage measurement. We found an unusual mobility change of Si delta-doped GaInP after annealing from Hall-effect measurement. The compensation effect of Si amphoteric property could not be used to explain this behavior. From photoluminescence spectra, it is suggested that the ordered/disordered transformation is the dominate factor for mobility increase after annealing. On the contrary, the degradation of quantum confinement in delta-doped structure by dopant diffusion after annealing is responsible for the decrease of mobility. Therefore, the behavior of mobility could be considered as a competition result of these two mechanisms.en_US
dc.language.isoen_USen_US
dc.subjectdelta-doped GaInPen_US
dc.subjectRTAen_US
dc.subjectC-V profileen_US
dc.subjectdiffusionen_US
dc.subjectordered disordereden_US
dc.titleEffects of rapid thermal annealing on Si delta-doped GaInP grown by low pressure metalorganic chemical vapor depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.34.6321en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume34en_US
dc.citation.issue12Aen_US
dc.citation.spage6321en_US
dc.citation.epage6325en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1995TP42100006-
dc.citation.woscount2-
Appears in Collections:Articles


Files in This Item:

  1. A1995TP42100006.pdf