標題: Effects of rapid thermal annealing on Si delta-doped GaInP grown by low pressure metalorganic chemical vapor deposition
作者: Wang, CJ
Feng, MS
Chan, SH
Wu, JW
Chang, CY
Sze, SM
材料科學與工程學系
電控工程研究所
Department of Materials Science and Engineering
Institute of Electrical and Control Engineering
關鍵字: delta-doped GaInP;RTA;C-V profile;diffusion;ordered disordered
公開日期: 1-十二月-1995
摘要: We have investigated the effects of rapid thermal annealing on the Si delta-doped GaInP. The spatial localization of carriers was derived and used to determine the diffusion coefficient of Si in GaInP by the capacitance-voltage measurement. We found an unusual mobility change of Si delta-doped GaInP after annealing from Hall-effect measurement. The compensation effect of Si amphoteric property could not be used to explain this behavior. From photoluminescence spectra, it is suggested that the ordered/disordered transformation is the dominate factor for mobility increase after annealing. On the contrary, the degradation of quantum confinement in delta-doped structure by dopant diffusion after annealing is responsible for the decrease of mobility. Therefore, the behavior of mobility could be considered as a competition result of these two mechanisms.
URI: http://dx.doi.org/10.1143/JJAP.34.6321
http://hdl.handle.net/11536/1638
ISSN: 0021-4922
DOI: 10.1143/JJAP.34.6321
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 34
Issue: 12A
起始頁: 6321
結束頁: 6325
顯示於類別:期刊論文


文件中的檔案:

  1. A1995TP42100006.pdf