標題: The Formation and the Plane Indices of Etched Facets of Wet Etching Patterned Sapphire Substrate
作者: Chen, Yu-Chung
Hsiao, Feng-Ching
Lin, Bo-Wen
Wang, Bau-Ming
Wu, YewChung Sermon
Hsu, Wen-Ching
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2012
摘要: A two-step chemical wet etching processes were used to investigated the formation and the plane indexes of exposed etched facets of wet etching patterned sapphire substrate (PSS). It was found when SiO2 mask still remained on the top c-plane, the structure of PSS comprised of a hexagonal pyramid covered with six facets {3 (4) over bar 17} with a flat top c-plane. When SiO2 mask were etched away, beside six facets on the bottom, there were 3 extra facets {1 (1) over bar 05} exposed on the top. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.095206jes] All rights reserved.
URI: http://hdl.handle.net/11536/16379
ISSN: 0013-4651
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 159
Issue: 6
結束頁: D362
顯示於類別:期刊論文


文件中的檔案:

  1. 000304140700051.pdf