Title: Application of Block Diagonal Technique to a Hamiltonian Matrix in Performing Spin-splitting Calculations for GaN Wurtzite Materials
Authors: Chen, Chun-Nan
Chang, Sheng-Hsiung
Su, Wei-Long
Wang, Wan-Tsang
Kao, Hsiu-Fen
Jen, Jen-Yi
Li, Yiming
Institute of Communications Engineering
Keywords: Spin splitting;Inversion asymmetry;GaN;Dresselhaus;Wurtzite
Issue Date: 1-Feb-2012
Abstract: The bulk inversion asymmetry (Dresselhaus) terms (i.e., B-2, B-1, and B'(1) terms) of wurtzite materials are determined. The 2 x 2 conduction band, 2 x 2 heavy-hole band, 2 x 2 light-hole band, and 2 x 2 crystal-field split-off hole band matrices of wurtzite semiconductors are developed and decoupled by using a block diagonal technique. Importantly, those 2 x 2 block diagonal matrices incorporate not only the interband coupling effect but also the bulk inversion asymmetry effect. Analytical expressions for the conduction and the valence band spin-splitting parameters and energies of GaN wurtzite materials are formulated by solving the block diagonal matrices. The presence of these terms is shown to include the spin-splitting phenomenon.
URI: http://hdl.handle.net/11536/16372
ISSN: 0374-4884
Volume: 60
Issue: 3
End Page: 403
Appears in Collections:Articles