標題: CHARACTERISTICS OF TOP-GATE THIN-FILM TRANSISTORS FABRICATED ON NITROGEN-IMPLANTED POLYSILICON FILMS
作者: YANG, CK
LEI, TF
LEE, CL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十二月-1995
摘要: The electrical characteristics of top-gate thin-film transistors (TFT's) fabricated on the nitrogen-implanted polysilicon of the doses ranging from 2 x 10(12)-2 x 10(14) ions/cm(2) were investigated in this work, The experimental results showed that nitrogen implanted into polysilicon followed by an 850 degrees C 1 h annealing step had some passivation effect and this effect was much enhanced by a following H-2-plasma treatment. The threshold voltages, subthreshold swings, ON-OFF current ratios, and field effect mobilities of both n-channel and p-channel TFT's were all improved, Moreover, the hot-carrier reliability was also improved, A donor effect of the nitrogen in polysilicon was also found which affected the overall passivation effect on the p-channel TFT's.
URI: http://dx.doi.org/10.1109/16.477775
http://hdl.handle.net/11536/1636
ISSN: 0018-9383
DOI: 10.1109/16.477775
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 42
Issue: 12
起始頁: 2163
結束頁: 2169
顯示於類別:期刊論文


文件中的檔案:

  1. A1995TH17200019.pdf