標題: Flexible One Diode-One Resistor Crossbar Resistive-Switching Memory
作者: Huang, Jiun-Jia
Hou, Tuo-Hung
Hsu, Chung-Wei
Tseng, Yi-Ming
Chang, Wen-Hsiung
Jang, Wen-Yueh
Lin, Chen-Hsi
電子物理學系
Department of Electrophysics
公開日期: 1-Apr-2012
摘要: We report the first demonstration of a flexible one diode-one resistor (1D1R) resistive-switching (RS) memory cell capable of high-density crossbar array implementation at an extremely low cost. A Ti/TiO2/Pt diode with a large rectifying ratio and a stable Ni/HfO2/Pt unipolar RS memory element have been fabricated on a polyimide substrate using only room-temperature processes. No significant degradation of the rectifying ratio of the TiO2 diode and the cycling variations, retention, and read disturb immunity of the HfO2 memory was observed in the bending state. The series 1D1R cell shows highly reproducible unipolar RS because of the low reset current of the HfO2 memory, which greatly mitigates the adverse effect of diode series resistance. Furthermore, the 1D1R cell can effectively suppress read interference and realize a crossbar array as large as 512 kbit. (C) 2012 The Japan Society of Applied Physics
URI: http://dx.doi.org/04DD09
http://hdl.handle.net/11536/16355
ISSN: 0021-4922
DOI: 04DD09
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 51
Issue: 4
結束頁: 
Appears in Collections:Articles


Files in This Item:

  1. 000303928600032.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.