標題: Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO2 Nanorod-Array Depth Patterned Sapphire Substrate
作者: Chiu, Ching-Hsueh
Tu, Po-Min
Chang, Shih-Pang
Lin, Chien-Chung
Jang, Chung-Ying
Li, Zhen-Yu
Yang, Hung-Chih
Zan, Hsiao-Wen
Kuo, Hao-Chung
Lu, Tien-Chang
Wang, Shing-Chung
Chang, Chun-Yen
光電系統研究所
電子工程學系及電子研究所
光電工程學系
Institute of Photonic System
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 1-Apr-2012
摘要: In this study, we investigated high-efficiency InGaN/GaN light-emitting diodes (LEDs) grown on sapphire substrates with SiO2 nanorod arrays (NRAs) of different heights. The GaN film showed an improved crystal quality through X-ray diffraction (XRD) full-width at half-maximum (FWHM), photoluminescence (PL), and cathodoluminescence (CL) measurements. The light output power and internal quantum efficiency (IQE) of the fabricated LEDs were increased when compared with those of conventional LEDs. Transmission electron microscopy (TEM) images suggested that the voids between SiO2 nanorods and the stacking faults introduced during the nanoscale epitaxial lateral overgrowth (NELOG) of GaN can effectively reduce the threading dislocation density (TDD). We believe that the improvements could be attributed to both the enhanced light extraction by utilizing SiO2 NRAs and the improved crystal quality through the NELOG method. We found that the sample with SiO2 NRA structures of 200 nm height can increase the LED output power by more than 70% in our study. (C) 2012 The Japan Society of Applied Physics
URI: http://dx.doi.org/04DG11
http://hdl.handle.net/11536/16353
ISSN: 0021-4922
DOI: 04DG11
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 51
Issue: 4
結束頁: 
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