標題: Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser
作者: Chen, Cheng-Chang
Chiu, Ching-Hsueh
Tu, Po-Min
Kuo, Ming-Yen
Shih, M. H.
Huang, Ji-Kai
Kuo, Hao-Chung
Zan, Hsiao-Wen
Chang, Chun-Yen
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 1-四月-2012
摘要: In this study, large-area GaN-based photonic quasicrystal (PQC) nanopillars were fabricated on an n-GaN substrate using the nanoimprint lithography (NIL) technique. Under optical pumping condition, a high lasing action from the GaN photonic quasicrystals was observed. The lasing wavelength is at 366nm with a low threshold power density of 0.009 kW/cm(2). To confirm the band-edge lasing mode, the finite-element method (FEM) was used to perform the simulation for the 12-fold symmetry photonic quasicrystal lattices. (C) 2012 The Japan Society of Applied Physics
URI: http://dx.doi.org/04DG02
http://hdl.handle.net/11536/16352
ISSN: 0021-4922
DOI: 04DG02
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 51
Issue: 4
結束頁: 
顯示於類別:期刊論文


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  1. 000303928600057.pdf