|Title:||Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser|
Shih, M. H.
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
|Abstract:||In this study, large-area GaN-based photonic quasicrystal (PQC) nanopillars were fabricated on an n-GaN substrate using the nanoimprint lithography (NIL) technique. Under optical pumping condition, a high lasing action from the GaN photonic quasicrystals was observed. The lasing wavelength is at 366nm with a low threshold power density of 0.009 kW/cm(2). To confirm the band-edge lasing mode, the finite-element method (FEM) was used to perform the simulation for the 12-fold symmetry photonic quasicrystal lattices. (C) 2012 The Japan Society of Applied Physics|
|Journal:||JAPANESE JOURNAL OF APPLIED PHYSICS|
|Appears in Collections:||Articles|
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