|標題:||Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser|
Shih, M. H.
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
|摘要:||In this study, large-area GaN-based photonic quasicrystal (PQC) nanopillars were fabricated on an n-GaN substrate using the nanoimprint lithography (NIL) technique. Under optical pumping condition, a high lasing action from the GaN photonic quasicrystals was observed. The lasing wavelength is at 366nm with a low threshold power density of 0.009 kW/cm(2). To confirm the band-edge lasing mode, the finite-element method (FEM) was used to perform the simulation for the 12-fold symmetry photonic quasicrystal lattices. (C) 2012 The Japan Society of Applied Physics|
|期刊:||JAPANESE JOURNAL OF APPLIED PHYSICS|