標題: LOW-TEMPERATURE GROWTH OF SILICON-BORON LAYER AS SOLID DIFFUSION SOURCE FOR POLYSILICON CONTACTED P(+)-N SHALLOW JUNCTION
作者: LEI, TF
CHEN, TP
LIN, HC
CHANG, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十二月-1995
摘要: A new material, Si-B, is proposed as a solid diffusion source for fabrication of poly-Si contacted p(+)-n shallow junctions, The junction depth of the Si-B source diode has been measured and compared with that of a BF2+-implanted poly-Si source diode, It was found that the Si-B source diode had a much shallower junction and was less sensitive to thermal budget than the BF2+ source diode, This was attributed to the smaller surface concentration and diffusivity of boron in the silicon in Si-B source diodes. Regarding electrical characteristics of diodes with a junction depth over 500 Angstrom, a forward ideality factor of better than 1.01 over 8 decades and a reverse-current density lower than 0.5 nA/cm(2) at -5 V were obtained, As the junction depth shrank to 300 Angstrom, the ideality factor and reverse current density of diodes increased slightly to 1.05 and 1.16 nA/cm(2), respectively, These results demonstrated that a uniform ultrashallow p(+)-n junction can be obtained by using a thin Si-B layer as a diffusion source.
URI: http://dx.doi.org/10.1109/16.477767
http://hdl.handle.net/11536/1635
ISSN: 0018-9383
DOI: 10.1109/16.477767
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 42
Issue: 12
起始頁: 2104
結束頁: 2110
顯示於類別:期刊論文


文件中的檔案:

  1. A1995TH17200011.pdf