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dc.contributor.authorWang, Chao-Hsunen_US
dc.contributor.authorChang, Shih-Pangen_US
dc.contributor.authorKu, Pu-Hsien_US
dc.contributor.authorLan, Yu-Pinen_US
dc.contributor.authorLin, Chien-Chungen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2014-12-08T15:23:17Z-
dc.date.available2014-12-08T15:23:17Z-
dc.date.issued2012-04-01en_US
dc.identifier.issn1882-0778en_US
dc.identifier.urihttp://dx.doi.org/042101en_US
dc.identifier.urihttp://hdl.handle.net/11536/16349-
dc.description.abstractEfficiency and droop behavior in InGaN/GaN light-emitting diodes (LEDs) are both improved using selectively graded composition multiple quantum barriers (SGQBs). Simulation results show that SGQBs could moderately improve the hole transport in the active region. In the meantime, the spatial distribution overlap between electrons and holes in the active region could also be well considered. Therefore, the radiative recombination of the SGQB LED is more efficient than that of the conventional LED. The overall efficiency and droop behavior are simultaneously improved in the SGQB LED, at both low and high current densities. (C) 2012 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleEfficiency and Droop Improvement in InGaN/GaN Light-Emitting Diodes by Selective Carrier Distribution Manipulationen_US
dc.typeArticleen_US
dc.identifier.doi042101en_US
dc.identifier.journalAPPLIED PHYSICS EXPRESSen_US
dc.citation.volume5en_US
dc.citation.issue4en_US
dc.citation.epageen_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000303931500013-
dc.citation.woscount2-
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