標題: Efficiency and Droop Improvement in InGaN/GaN Light-Emitting Diodes by Selective Carrier Distribution Manipulation
作者: Wang, Chao-Hsun
Chang, Shih-Pang
Ku, Pu-Hsi
Lan, Yu-Pin
Lin, Chien-Chung
Kuo, Hao-Chung
Lu, Tien-Chang
Wang, Shing-Chung
Chang, Chun-Yen
光電系統研究所
電子工程學系及電子研究所
光電工程學系
Institute of Photonic System
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 1-四月-2012
摘要: Efficiency and droop behavior in InGaN/GaN light-emitting diodes (LEDs) are both improved using selectively graded composition multiple quantum barriers (SGQBs). Simulation results show that SGQBs could moderately improve the hole transport in the active region. In the meantime, the spatial distribution overlap between electrons and holes in the active region could also be well considered. Therefore, the radiative recombination of the SGQB LED is more efficient than that of the conventional LED. The overall efficiency and droop behavior are simultaneously improved in the SGQB LED, at both low and high current densities. (C) 2012 The Japan Society of Applied Physics
URI: http://dx.doi.org/042101
http://hdl.handle.net/11536/16349
ISSN: 1882-0778
DOI: 042101
期刊: APPLIED PHYSICS EXPRESS
Volume: 5
Issue: 4
結束頁: 
顯示於類別:期刊論文


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