標題: Random Work-Function-Induced Threshold Voltage Fluctuation in Metal-Gate MOS Devices by Monte Carlo Simulation
作者: Li, Yiming
Cheng, Hui-Wen
電機資訊學士班
Undergraduate Honors Program of Electrical Engineering and Computer Science
關鍵字: Averaged work function;metal gate;Monte Carlo;MOS devices;threshold voltage fluctuation simulation;work function (WK)
公開日期: 1-五月-2012
摘要: In this paper, we estimate the effect of random work function (WK) on the threshold voltage fluctuation (sigma V-th) of 16-nm-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) with metal-gate materials. To examine the random WK induced sigma V-th, nanosized metal grains with different gate materials are considered in a large-scale statistical simulation. An analytical expression of the WK induced sigma V-th is proposed based on the Monte Carlo simulation results which can outlook different extents of fluctuation resulting from various metal gates and benefit the device fabrication. Devices with a two-layer metal-gate are further studied for fluctuation suppression; the finding of this paper indicates the first layer of the gate structure plays the most significant role in the suppression of the WK induced sigma V-th, compared with the second layer. This paper provides an insight into random work-function-induced threshold voltage fluctuation, which can, in turn, be used to assess metal gate characteristics of MOSFETs.
URI: http://hdl.handle.net/11536/16337
ISSN: 0894-6507
期刊: IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
Volume: 25
Issue: 2
結束頁: 266
顯示於類別:期刊論文


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  1. 000303999400017.pdf