Title: Physical properties of amorphous Mo-doped In-Ga-Zn-O films grown by magnetron co-sputtering technique
Authors: Liu, Shiu-Jen
Fang, Hau-Wei
Hsieh, Jang-Hsing
Juang, Jenh-Yih
Department of Materials Science and Engineering
Department of Electrophysics
Keywords: Amorphous materials;Semiconductors;Sputtering;Electrical properties;Magnetic properties;Optical properties
Issue Date: 1-Jun-2012
Abstract: Amorphous thin films of In-Ga-Zn-O (a-IGZO) doped with Mo have been fabricated by using magnetron co-sputtering technique. The Mo concentration in a-IGZO films was modulated by varying the sputtering power applied on the Mo target. The electrical, optical and magnetic properties of Mo-doped a-IGZO films grown on glasses were investigated. The carrier density and mobility of a-IGZO films can be remarkably enhanced by low concentration Mo doping. On the other hand, the optical bandgap of a-IGZO films is not significantly affected by Mo doping. However, the transmission is decreased with increasing the Mo doping. Moreover, all Mo-doped films exhibit room-temperature ferromagnetism. (C) 2012 Elsevier Ltd. All rights reserved.
URI: http://hdl.handle.net/11536/16288
ISSN: 0025-5408
Volume: 47
Issue: 6
End Page: 1568
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