標題: 60-GHz Dual-Conversion Down-/Up-Converters Using Schottky Diode in 0.18 mu m Foundry CMOS Technology
作者: Wei, Hung-Ju
Meng, Chinchun
Wang, Ta-Wei
Lo, Tai-Lin
Wang, Chia-Ling
電機工程學系
Department of Electrical and Computer Engineering
關鍵字: Converter;dual conversion;mixer;phase-inverter rat-race coupler;Schottky diode;single-sideband rejection;sub-harmonically pumped mixer;trifilar transformer;0.18-mu m foundry CMOS technology;60-GHz
公開日期: 1-六月-2012
摘要: Due to the benefits of Schottky diodes, 0.18-mu m CMOS technology is being promoted for millimeter wave applications. In this paper, 60-GHz dual-conversion down-/up-converters using Schottky diodes are realized by using 0.18-mu m foundry CMOS technology. A CoSi2-Si Schottky diode, fabricated on a lower doped N-well by blocking the threshold voltage adjustment implant, has a lower reverse leakage current and a better ideality factor. Thus, it is ideal for the 60-GHz sub-harmonic mixer design. Two new types of Schottky-diode mixers, a down-conversion sub-harmonic mixer with a dual-band lump-distributed phase-inverter rat-race coupler and an up-conversion sub-harmonic mixer with a trifilar transformer, are realized and employed at the high-frequency conversion stage of the dual-conversion architecture to achieve small size and broadband isolations. The silicon-based Schottky diode with a low turn-on voltage offers great advantage in LO pumping power, especially for an antiparallel diode pair structure. In our Schottky-diode sub-harmonic mixers, the required LO power is only 1 dBm. The dual-conversion down-converter achieves 5-dB conversion gain and 19 dB noise figure under V-dd = 2.5 V and I-dd = 22 mA, and the dual-conversion up-converter, with V-dd = 2.5 V and I-dd = 26 mA, attains greater than 40-dB sideband rejection and -1 dB conversion gain over the whole 60-GHz bandwidth.
URI: http://hdl.handle.net/11536/16271
ISSN: 0018-9480
期刊: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Volume: 60
Issue: 6
結束頁: 1684
顯示於類別:期刊論文


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  1. 000304857200022.pdf