標題: STRUCTURAL EFFECT ON BAND-TRAP-BAND TUNNELING INDUCED DRAIN LEAKAGE IN N-MOSFETS
作者: WANG, TH
CHANG, TE
HUANG, CM
YANG, JY
CHANG, KM
CHIANG, LP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十二月-1995
摘要: The structural dependence of the hot carrier stress incurred drain leakage current via band-trap-band tunneling in off-state has been modeled and characterized in conventional S/D, DDD, and LDD n-MOSFET structures, The results shows that lateral field enhanced band-trap-band tunneling is primarily responsible for an increased drain leakage current after hot carrier stress in LDD structures while vertical field induced tunneling is dominant in conventional S/D and DDD structures.
URI: http://dx.doi.org/10.1109/55.475589
http://hdl.handle.net/11536/1623
ISSN: 0741-3106
DOI: 10.1109/55.475589
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 16
Issue: 12
起始頁: 566
結束頁: 568
顯示於類別:期刊論文


文件中的檔案:

  1. A1995TH28600012.pdf