標題: Improved efficiency for nanopillar array of c-Si photovoltaic by down-conversion and anti-reflection of quantum dots
作者: Lin, Chien-Chung
Chen, Hsin-Chu
Han, Hau-Vei
Tsai, Yu-Lin
Chang, Chia-Hua
Tsai, Min-An
Kuo, Hao-Chung
Yu, Peichen
光電系統研究所
Institute of Photonic System
關鍵字: Solar cell;Photovoltaic;Down-conversion;Antireflection;Nanopillars;Quantum dots
公開日期: 2012
摘要: Improvement of efficiency for crystalline silicon (c-Si) with nanopillar arrays (NPAs) solar cell was demonstrated by deployment of CdS quantum dots (QDs). The NPAs was fabricated by colloidal lithography of self-assembled polystyrene (PS) nanospheres with a 600 nm in size and reactive-ion etching techniques, and then a colloidal CdS QDs with a concentration of 5 mg/mL was spun on the surface of c-Si with NPAs solar cell. Under a simulated one-sun condition, the device with CdS QDs shows a 33% improvement of power conversion efficiency, compared with the one without QDs. Additionally, we also found that the device with CdS QDs shows a 32% reduction in electrical resistance, compared with the one without QDs solar cell, under an ultraviolet (UV) light of 355nm illumination. This reduced electrical resistance can directly contribute to our fill-factor (FF) enhancement. For further investigation, the excitation spectrum of photoluminescence (PL), absorbance spectrum, current-voltage (I-V) characteristics, reflectance and external quantum efficiency (EQE) of the device were measured and analyzed. Based on the spectral response and optical measurement, we believe that CdS QDs not only have the capability for photon down-conversion in ultraviolet region, but also provide extra antireflection capability.
URI: http://hdl.handle.net/11536/16225
http://dx.doi.org/825609
ISBN: 978-0-8194-8899-2
ISSN: 0277-786X
DOI: 825609
期刊: PHYSICS, SIMULATION, AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES
Volume: 8256
Appears in Collections:Conferences Paper


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