標題: Indentation-Induced Mechanical Deformation Behaviors of AlN Thin Films Deposited on c-Plane Sapphire
作者: Jian, Sheng-Rui
Juang, Jenh-Yih
電子物理學系
Department of Electrophysics
公開日期: 2012
摘要: The mechanical properties and deformation behaviors of AlN thin films deposited on c-plane sapphire substrates by helicon sputtering method were determined using the Berkovich nanoindentation and cross-sectional transmission electron microscopy (XTEM). The load-displacement curves show the "pop-ins" phenomena during nanoindentation loading, indicative of the formation of slip bands caused by the propagation of dislocations. No evidence of nanoindentation-induced phase transformation or cracking patterns was observed up to the maximum load of 80 mN, from either XTEM or atomic force microscopy (AFM) of the mechanically deformed regions. Instead, XTEM revealed that the primary deformation mechanism in AlN thin films is via propagation of dislocations on both basal and pyramidal planes. Furthermore, the hardness and Young's modulus of AlN thin films estimated using the continuous contact stiffness measurements (CSMs) mode provided with the nanoindenter are 16.2GPa and 243.5GPa, respectively.
URI: http://hdl.handle.net/11536/16200
http://dx.doi.org/914184
ISSN: 1687-4110
DOI: 914184
期刊: JOURNAL OF NANOMATERIALS
顯示於類別:期刊論文


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