標題: Metal-organic chemical vapor deposition of tantalum nitride barrier layers for ULSI applications
作者: Tsai, MH
Sun, SC
Lee, CP
Chiu, HT
Tsai, CE
Chuang, SH
Wu, SC
應用化學系
電子工程學系及電子研究所
奈米中心
Department of Applied Chemistry
Department of Electronics Engineering and Institute of Electronics
Nano Facility Center
關鍵字: chemical vapour deposition;organometallic vapour deposition;metallization;tantalum
公開日期: 1-十二月-1995
摘要: Low-resistivity tantalum nitride (TaN) films were deposited by low-pressure metal-organic chemical vapor deposition (MOCVD) using a new precursor tertbutylimidotrisdiethyl amidotantalum. The surface morphology and the step coverage of TaN films were characterized by scanning electron microscopy. The film deposited at 450 degrees C had nearly 100% step coverage and the step coverage decreased to 25% for the films deposited at 650 degrees C, The carbon and oxygen concentrations are about 10 at.% in the CVD TaN films, as determined by Auger electron spectroscopy. From Rutherford backscattering spectroscopy and secondary ion mass spectroscopy analysis, TaN films were found to be effective diffusion barriers between aluminum and silicon up to 550 degrees C. The electrical measurements of diode-leakage current indicate that the Al/TaN/Si structure remained stable up to 500 degrees C, after which Al started to diffuse through the TaN layer and resulted in a higher leakage current.
URI: http://hdl.handle.net/11536/1620
ISSN: 0040-6090
期刊: THIN SOLID FILMS
Volume: 270
Issue: 1-2
起始頁: 531
結束頁: 536
顯示於類別:會議論文


文件中的檔案:

  1. A1995TM18700100.pdf