標題: Charging damages to gate oxides in a helicon O-2 plasma
作者: Lin, W
Kang, TK
Perng, YC
Dai, BT
Cheng, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: leakage current;C-V curve;Q(bd);antenna structure;charging damage
公開日期: 1-十二月-1997
摘要: After the exposure of metal oxide semiconductor (MOS) capacitors with antenna structures to the helicon O-2 plasma, the leakage current. charge-to-breakdown (Q(bd)) and capacitance-voltage (C-V) curves have been characterized to realize the charging damages. The results indicate that the quasi static C-V(QSCV) distortion and Q(bd) depend on the exposure time rather than the antenna ratio. The QSCV and Q(bd) Show a two stage degradation as the exposure time increases. The leakage current increases slightly for the specimens exposed to the plasma for less than 120 s, and increases considerably for the ones with the exposure time of 300 s. Based on these results, the degradation mechanism of gate oxides under the helicon O-2 plasma is established.
URI: http://dx.doi.org/10.1143/JJAP.36.7362
http://hdl.handle.net/11536/162
ISSN: 0021-4922
DOI: 10.1143/JJAP.36.7362
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 36
Issue: 12A
起始頁: 7362
結束頁: 7366
顯示於類別:期刊論文


文件中的檔案:

  1. 000071543500057.pdf