標題: The Deterioration of a-IGZO TFTs Owing to the Copper Diffusion after the Process of the Source/Drain Metal Formation
作者: Tai, Ya-Hsiang
Chiu, Hao-Lin
Chou, Lu-Sheng
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
公開日期: 2012
摘要: In this work, the influence of copper on amorphous type Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor's (TFTs) transfer curve is studied. The I-D-V-G curves of a-IGZO TFTs with source/drain in the structures of Cu/Ti and Ti/Al/Ti are compared. The results show that the copper greatly deteriorates the performance of the TFTs. The presence of the copper in the channel region of the device is verified by SIMS analysis. A Cu-dipping experiment is conducted by dipping devices into the solution of CuSO4 to confirm the role of copper in the deterioration of the ID-VG curves. The hypothesis is also verified through ATLAS device simulator. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.025206jes]
URI: http://hdl.handle.net/11536/16187
ISSN: 0013-4651
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 159
Issue: 5
結束頁: J200
顯示於類別:期刊論文


文件中的檔案:

  1. 000302211800082.pdf