標題: Resistance Switching in Ni/HfOx/Ni Nonvolatile Memory Device with CF4/O-2 Plasma Post-treatment
作者: Lai, Chiung-Hui
Chang, Te-Shun
Tzeng, Wen-Hsien
Chang, Kow-Ming
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-一月-2012
摘要: The resistance switching characteristics of Ni/HfOx/Ni capacitor structures with CF4/O-2 plasma post-treatment of different gas flow rate ratios were investigated. The HfOx film was deposited by an electron-gun evaporator, followed by the CF4/O-2 plasma post-treatment with different gas flow rate ratios. According to the filament model, conducting filaments (CFs) are formed by the percolation of various types of defects such as oxygen ions and oxygen vacancies. Moreover, the incorporation of oxygen/fluorine may terminate the oxygen vacancies to form Hf-F bonds and eliminate both fixed and interface traps, which can help to form fixed CFs in the film owing to local stronger Hf-F bonds. In this work, the improvement in the stability of resistance switching and current in the high-resistance state (HRS) was achieved by suitable plasma post-treatment. This may be attributed to the formation of Hf-F bonds as observed through electron spectroscopy for chemical analysis. (C) 2012 The Japan Society of Applied Physics
URI: http://dx.doi.org/01AJ10
http://hdl.handle.net/11536/16170
ISSN: 0021-4922
DOI: 01AJ10
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 51
Issue: 1
結束頁: 
顯示於類別:期刊論文


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