標題: Analytical Model of Subthreshold Current and Threshold Voltage for Fully Depleted Double-Gated Junctionless Transistor
作者: Lin, Zer-Ming
Lin, Horng-Chih
Liu, Keng-Ming
Huang, Tiao-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-二月-2012
摘要: In this study, we derive an analytical model of an electric potential of a double-gated (DG) fully depleted (FD) junctionless (J-less) transistor by solving the two-dimensional Poisson's equation. On the basis of this two-dimensional electric potential model, subthreshold current and swing can be calculated. Threshold voltage roll-off can also be estimated with analytical forms derived using the above model. The calculated results of electric potential, subthreshold current and threshold voltage roll-off are all in good agreement with the results of technology computer aided design (TCAD) simulation. The model proposed in this paper may help in the development of a compact model for simulation program with integrated circuit emphasis (SPICE) simulation and in providing deeper insights into the characteristics of short-channel J-less transistors. (C) 2012 The Japan Society of Applied Physics
URI: http://dx.doi.org/02BC14
http://hdl.handle.net/11536/16144
ISSN: 0021-4922
DOI: 02BC14
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 51
Issue: 2
結束頁: 
顯示於類別:期刊論文


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  1. 000303481400021.pdf