Full metadata record
DC FieldValueLanguage
dc.contributor.authorLee, Dai-Yingen_US
dc.contributor.authorYao, I-Chuanen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2014-12-08T15:22:53Z-
dc.date.available2014-12-08T15:22:53Z-
dc.date.issued2012-02-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/02BJ04en_US
dc.identifier.urihttp://hdl.handle.net/11536/16142-
dc.description.abstractThe resistive switching properties of the ZrO2 memory devices with bottom electrode modification by using Au nanodots are investigated in this study. The regular arrays of Au nanodots are fabricated on Pt bottom electrode by nanosphere lithography. Due to the tip of the Au nanodots on the Pt bottom electrode, it causes the higher electric field within the ZrO2 film above the nanodots due to reduced effective film thickness and induces the localized conducting filaments easily. The operation parameters' variation for switching devices is, therefore, suppressed with lower operation voltage and resistance ratio. Long retention time (> 10(6) s) and stubborn nondestructive readout test (> 10(4) s) at room temperature and 150 degrees C are also demonstrated in this device. (C) 2012 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleBottom Electrode Modification of ZrO2 Resistive Switching Memory Device with Au Nanodotsen_US
dc.typeArticleen_US
dc.identifier.doi02BJ04en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume51en_US
dc.citation.issue2en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000303481400069-
dc.citation.woscount4-
Appears in Collections:Articles


Files in This Item:

  1. 000303481400069.pdf