標題: Bottom Electrode Modification of ZrO2 Resistive Switching Memory Device with Au Nanodots
作者: Lee, Dai-Ying
Yao, I-Chuan
Tseng, Tseung-Yuen
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-二月-2012
摘要: The resistive switching properties of the ZrO2 memory devices with bottom electrode modification by using Au nanodots are investigated in this study. The regular arrays of Au nanodots are fabricated on Pt bottom electrode by nanosphere lithography. Due to the tip of the Au nanodots on the Pt bottom electrode, it causes the higher electric field within the ZrO2 film above the nanodots due to reduced effective film thickness and induces the localized conducting filaments easily. The operation parameters' variation for switching devices is, therefore, suppressed with lower operation voltage and resistance ratio. Long retention time (> 10(6) s) and stubborn nondestructive readout test (> 10(4) s) at room temperature and 150 degrees C are also demonstrated in this device. (C) 2012 The Japan Society of Applied Physics
URI: http://dx.doi.org/02BJ04
http://hdl.handle.net/11536/16142
ISSN: 0021-4922
DOI: 02BJ04
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 51
Issue: 2
結束頁: 
顯示於類別:期刊論文


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