標題: Investigation of Hot-Carrier Stress Effect on High-Frequency Performance of Laterally Diffused Metal-Oxide-Semiconductor Transistors
作者: Chen, Kun-Ming
Mou, Zong-Wen
Kuo, Hao-Chung
Chiu, Chia-Sung
Chen, Bo-Yuan
Liu, Wen-De
Chen, Ming-Yi
Yang, Yu-Chi
Wang, Kai-Li
Huang, Guo-Wei
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 1-二月-2012
摘要: The hot-carrier stress effects on the high-frequency performance characteristics of laterally diffused metal-oxide-semiconductor (LDMOS) transistors were investigated. A constant bias channel hot-carrier stress was applied at room temperature. After applying 3 h of hot-carrier stress, the on-resistance and saturation drain current degradations are 18 and 9%, respectively. However, the degradations of the cutoff frequency and maximum oscillation frequency were less than 2% when the devices were biased before the onset of quasi-saturation. In addition, we found that the degradations of high-frequency parameters are not related to the change in transconductance but to the changes in gate capacitances. Finally, S-parameter variations under hot-carrier stress were also examined in this study. The observations of S-parameter variations are important for RF power amplifier design. (C) 2012 The Japan Society of Applied Physics
URI: http://dx.doi.org/02BC12
http://hdl.handle.net/11536/16140
ISSN: 0021-4922
DOI: 02BC12
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 51
Issue: 2
結束頁: 
顯示於類別:期刊論文


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