標題: Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates
作者: Liu, Keng-Ku
Zhang, Wenjing
Lee, Yi-Hsien
Lin, Yu-Chuan
Chang, Mu-Tung
Su, ChingYuan
Chang, Chia-Seng
Li, Hai
Shi, Yumeng
Zhang, Hua
Lai, Chao-Sung
Li, Lain-Jong
光電工程學系
Department of Photonics
關鍵字: Transition metal dichalcogenides;molybdenum disulfide;layered materials;transistors;two-dimensional materials;semiconductors
公開日期: 1-Mar-2012
摘要: The two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential applications in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rare. Here we report that the high-temperature annealing of a thermally decomposed ammonium thiomolybdate layer in the presence of sulfur can produce large-area MoS2 thin layers with superior electrical performance on insulating substrates. Spectroscopic and microscopic results reveal that the synthesized MoS2 sheets are highly crystalline. The electron mobility of the bottom-gate transistor devices made of the synthesized MoS2 layer is comparable with those of the micromechanically exfoliated thin sheets from MoS2 crystals. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.
URI: http://hdl.handle.net/11536/16132
ISSN: 1530-6984
期刊: NANO LETTERS
Volume: 12
Issue: 3
結束頁: 1538
Appears in Collections:Articles


Files in This Item:

  1. 000301406800072.pdf