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dc.contributor.authorLin, Chun-Yuen_US
dc.contributor.authorChu, Li-Weien_US
dc.contributor.authorKer, Ming-Douen_US
dc.date.accessioned2014-12-08T15:22:52Z-
dc.date.available2014-12-08T15:22:52Z-
dc.date.issued2012-03-01en_US
dc.identifier.issn0018-9480en_US
dc.identifier.urihttp://hdl.handle.net/11536/16125-
dc.description.abstractTo effectively protect the radio-frequency (RF) circuits in nanoscale CMOS technology from electrostatic discharge (ESD) damages, the silicon-controlled rectifier (SCR) devices have been used as main on-chip ESD protection devices due to their high ESD robustness and low parasitic capacitance. In this paper, an SCR device assisted with an inductor is proposed to improve the turn-on efficiency for ESD protection. Besides, the inductor can be also designed to resonate with the parasitic capacitance of the SCR device at the selected frequency band for RF performance fine tuning. Experimental results of the ESD protection design with inductor-triggered SCR in a nanoscale CMOS process have been successfully verified at 60-GHz frequency. The ESD protection design with inductor-triggered SCR has been implemented in cell configuration with compact size, which can be directly used in the RF receiver circuits. To verify the RF characteristics and ESD robustness in the RF receiver, the inductor-triggered SCR has been applied to a 60-GHz low-noise amplifier (LNA). Verified in a silicon chip, the 60-GHz LNA with the inductor-triggered SCR can achieve good RF performances and high ESD robustness.en_US
dc.language.isoen_USen_US
dc.subjectElectrostatic discharge (ESD)en_US
dc.subjectlow-noise amplifier (LNA)en_US
dc.subjectsilicon-controlled rectifier (SCR)en_US
dc.subject60 GHzen_US
dc.titleESD Protection Design for 60-GHz LNA With Inductor-Triggered SCR in 65-nm CMOS Processen_US
dc.typeArticleen_US
dc.identifier.journalIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUESen_US
dc.citation.volume60en_US
dc.citation.issue3en_US
dc.citation.epage714en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000302503800011-
dc.citation.woscount6-
Appears in Collections:Articles


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