標題: CHARACTERISTICS OF POLYCRYSTALLINE FILMS GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION SYSTEM
作者: LIN, HY
LEI, TF
LIN, HC
CHANG, CY
TWU, RC
DENG, RC
LIN, JD
電子物理學系
Department of Electrophysics
公開日期: 1-十二月-1995
摘要: In situ boron-doped polycrystalline Si1-xGex (poly-Si1-xGex) films deposited by ultrahigh vacuum chemical vapor deposition (UHV/CVD) system were characterized. Optimum fitted values of grain boundary trap state densities, 4.0 x 10(12) cm(-2) and 4.9 x 10(12) cm(-2) were obtained for poly-Si and poly-Si0.79Ge0.21, respectively. The extracted average carrier concentration in the grain agrees with secondary ion mass spectroscopy (SIMS) analysis. In turn, we found that these films are suitable Hall elements to sense magnetic field. Experimental results show that the sensitivity decreased with the increasing input current, which can be well explained using the thermionic emission theory. Finally, we use these films to fabricate thin film transistors.
URI: http://hdl.handle.net/11536/1612
ISSN: 0038-1101
期刊: SOLID-STATE ELECTRONICS
Volume: 38
Issue: 12
起始頁: 2029
結束頁: 2033
顯示於類別:期刊論文


文件中的檔案:

  1. A1995TC64500008.pdf