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dc.contributor.authorCheng, Chunen_US
dc.contributor.authorLin, Sheng-Dien_US
dc.contributor.authorPan, Chien-Hungen_US
dc.contributor.authorLin, Chien-Hungen_US
dc.contributor.authorFu, Ying-Jheen_US
dc.date.accessioned2014-12-08T15:22:51Z-
dc.date.available2014-12-08T15:22:51Z-
dc.date.issued2012-03-26en_US
dc.identifier.issn0375-9601en_US
dc.identifier.urihttp://hdl.handle.net/11536/16111-
dc.description.abstractWe study the temperature-dependent time-resolved photoluminescence (TRPL) of self-assembled InAs quantum dots (QDs). Under low excitation power, a surprisingly long PL decay time is observed at about 60 K, under the thermal redistribution temperature. The long decay time decreases with increasing excitation power but is nearly independent of the detection energy of TRPL measurements. A model considering the spin relaxation through the excited excitonic state is proposed to quantitatively explain the unusual phenomena. The rate equation analysis indicates that the observation of long-lived excitons is caused by the shortened spin-flip time. (c) 2012 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectQuantum doten_US
dc.subjectTime-resolved photoluminescenceen_US
dc.subjectSpin-flipen_US
dc.titleObservation of long-lived excitons in InAs quantum dots under thermal redistribution temperatureen_US
dc.typeArticleen_US
dc.identifier.journalPHYSICS LETTERS Aen_US
dc.citation.volume376en_US
dc.citation.issue17en_US
dc.citation.epage1495en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000302983700017-
dc.citation.woscount1-
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