標題: Optical properties of Mn in regrown GaN-based epitaxial layers
作者: Huang, Feng-Wen
Sheu, Jinn-Kong
Tu, Shang-Ju
Chen, Po-Cheng
Yeh, Yu-Hsiang
Lee, Ming-Lun
Lai, Wei-Chih
Tsai, Wen-Che
Chang, Wen-Hao
電子物理學系
Department of Electrophysics
公開日期: 1-四月-2012
摘要: The memory effect and redistribution of manganese (Mn) into subsequently regrown GaN-based epitaxial layers by metalorganic chemical vapor deposition were revealed. Low-temperature up-converted photoluminescence (UPL) and the secondary ion mass spectrometry were performed on GaN-based epitaxial samples with and without Mn doping to study the effect of residual Mn on optical property. UPL emission, which originated from residual Mn doping in regrown InGaN quantum wells (QWs) because of the memory effect of the reactor, could be eliminated in an air-exposed and H-2-baking manner prior to the regrowth of the QWs. Considerable residual Mn background level and slow decay rate of Mn concentration tail were also observed in the regrown epitaxial layers, which could be attributed to the memory effect or surface segregation and diffusion from the Mn-doped underlying layer during regrowth in the Mn-free reactor. (C) 2012 Optical Society of America
URI: http://hdl.handle.net/11536/16102
ISSN: 2159-3930
期刊: OPTICAL MATERIALS EXPRESS
Volume: 2
Issue: 4
結束頁: 469
顯示於類別:期刊論文


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  1. 000302957100014.pdf