標題: A 2-D ANALYTIC MODEL FOR THE THRESHOLD-VOLTAGE OF FULLY DEPLETED SHORT GATE-LENGTH SI-SOI MESFETS
作者: HOU, CS
WU, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十二月-1995
摘要: A two zone Green's function solution method is proposed to analytically model the potential distribution in the silicon film of fully depleted SOI MESFET's, in which the exact solution of 2-D Poisson's equation is obtained by using the appropriate boundary conditions, From the derived analytic 2-D potential distribution, the bottom potential in the active silicon film is used to analyze the drain-induced barrier lowering effect and the threshold voltage is defined in terms of minimum channel potential barrier, The results of the developed analytic threshold-voltage model are compared with those of 2-D numerical simulation, and good agreements are obtained for the gate length down to 0.1 mu m with wide ranges of structure parameters and bias conditions.
URI: http://dx.doi.org/10.1109/16.477774
http://hdl.handle.net/11536/1610
ISSN: 0018-9383
DOI: 10.1109/16.477774
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 42
Issue: 12
起始頁: 2156
結束頁: 2162
顯示於類別:期刊論文


文件中的檔案:

  1. A1995TH17200018.pdf