標題: Rapid Prediction of RRAM RESET-State Disturb by Ramped Voltage Stress
作者: Luo, Wun-Cheng
Lin, Kuan-Liang
Huang, Jiun-Jia
Lee, Chung-Lun
Hou, Tuo-Hung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Read disturb;reliability;resistive switching;resistive-switching random access memory (RRAM);voltage acceleration model
公開日期: 1-四月-2012
摘要: This letter proposes a novel technique for predicting with high confidence the disturbance of the resistive-switching random access memory (RRAM) RESET state based on ramped voltage stress. The technique yields statistical distributions and voltage acceleration parameters equivalent to those of a conventional constant voltage method. Several ramp rates and acceleration models were validated for the accuracy regarding conversion between the two methods. The proposed method not only reduces the time and cost of reliability analysis but also provides a quantitative link between disturbance properties and the widely available RRAM data measured by a linear voltage ramp. Additionally, the non-Poisson area scaling supports the localized filament model.
URI: http://hdl.handle.net/11536/16087
ISSN: 0741-3106
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 4
結束頁: 597
顯示於類別:期刊論文


文件中的檔案:

  1. 000302232900044.pdf