Title: Rapid Prediction of RRAM RESET-State Disturb by Ramped Voltage Stress
Authors: Luo, Wun-Cheng
Lin, Kuan-Liang
Huang, Jiun-Jia
Lee, Chung-Lun
Hou, Tuo-Hung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: Read disturb;reliability;resistive switching;resistive-switching random access memory (RRAM);voltage acceleration model
Issue Date: 1-Apr-2012
Abstract: This letter proposes a novel technique for predicting with high confidence the disturbance of the resistive-switching random access memory (RRAM) RESET state based on ramped voltage stress. The technique yields statistical distributions and voltage acceleration parameters equivalent to those of a conventional constant voltage method. Several ramp rates and acceleration models were validated for the accuracy regarding conversion between the two methods. The proposed method not only reduces the time and cost of reliability analysis but also provides a quantitative link between disturbance properties and the widely available RRAM data measured by a linear voltage ramp. Additionally, the non-Poisson area scaling supports the localized filament model.
URI: http://hdl.handle.net/11536/16087
ISSN: 0741-3106
Journal: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 4
End Page: 597
Appears in Collections:Articles


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