標題: Random Telegraph Noise in 1X-nm CMOS Silicide Contacts and a Method to Extract Trap Density
作者: Chen, Min-Cheng
Lin, Chia-Yi
Chen, Bo-Yuan
Lin, Chang-Hsien
Huang, Guo-Wei
Ho, Chia-Hua
Wang, Tahui
Hu, Chenming
Yang, Fu-Liang
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Contact resistance;Poisson distribution;random telegraph noise (RTN);silicide-process-induced traps
公開日期: 1-四月-2012
摘要: The behavior of random telegraph noise was affected by nickel silicide barrier height engineering in advanced nano-CMOS technologies. Contact resistance fluctuations with magnitude of up to 40% were observed when a Schottky barrier was reduced to 0.2 eV. The large contact resistance instability is attributed to the barrier modification by positive charge trapping and detrapping in a Schottky contact. The prevalence and magnitude of the noise are dependent on the contact area, trap density, trap energy, and the silicide Schottky barrier height. In this letter, we propose a fast method to extract the density of responsible contact traps.
URI: http://hdl.handle.net/11536/16086
ISSN: 0741-3106
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 4
結束頁: 591
顯示於類別:期刊論文


文件中的檔案:

  1. 000302232900042.pdf