標題: Characteristics of IGZO TFT Prepared by Atmospheric Pressure Plasma Jet Using PE-ALD Al2O3 Gate Dielectric
作者: Wu, Chien-Hung
Chang, Kow-Ming
Huang, Sung-Hung
Deng, I-Chung
Wu, Chin-Jyi
Chiang, Wei-Han
Chang, Chia-Chiang
電機工程學系
Department of Electrical and Computer Engineering
關鍵字: Al2O3;atmospheric pressure plasma jet (APPJ);indium-gallium-zinc oxide (IGZO);nonvacuum;plasma-enhanced atomic layer deposition (PE-ALD)
公開日期: 1-四月-2012
摘要: This letter proposes a novel atmospheric pressure plasma jet (APPJ) method for indium-gallium-zinc-oxide (IGZO) deposition and use of the plasma-enhanced atomic layer deposition (PE-ALD) Al2O3 as gate dielectric. A nonvacuum and simple APPJ system was demonstrated for channel material deposition. High-transmittance nanocrystalline IGZO thin films were obtained. Excellent electrical characteristics were achieved, including a low V-T of 0.71 V, a small subthreshold swing of 276 mV/dec, a mobility of 8.39 cm(2)/(V . s), and a large I-on/I-off ratio of 1 x 10(8).
URI: http://hdl.handle.net/11536/16084
ISSN: 0741-3106
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 4
結束頁: 552
顯示於類別:期刊論文


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  1. 000302232900029.pdf