標題: Abnormal Subthreshold Leakage Current at High Temperature in InGaZnO Thin-Film Transistors
作者: Chang, Geng-Wei
Chang, Ting-Chang
Jhu, Jhe-Ciou
Tsai, Tsung-Ming
Syu, Yong-En
Chang, Kuan-Chang
Tai, Ya-Hsiang
Jian, Fu-Yen
Hung, Ya-Chi
光電工程學系
Department of Photonics
關鍵字: Indium-gallium-zinc-oxide (IGZO);temperature;thermal-induced hole;thin-film transistors (TFTs)
公開日期: 1-四月-2012
摘要: Abnormal subthreshold leakage current is observed at high temperature in amorphous InGaZnO thin-film transistors. The transfer curve exhibits an apparent subthreshold current stretch-out phenomenon that becomes more serious with increasing temperatures. The negative bias temperature instability experiment has been used to prove high-temperature-induced hole generation. Furthermore, the transfer characteristics with different drain voltages have been also used to confirm the status of hole accumulation. These pieces of evidence clearly defined the stretch-out phenomenon, which is caused by thermal-induced hole generation and accumulation at the source region that leads to source-side barrier lowering.
URI: http://hdl.handle.net/11536/16083
ISSN: 0741-3106
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 4
結束頁: 540
顯示於類別:期刊論文


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  1. 000302232900025.pdf