標題: LDMOS Transistor High-Frequency Performance Enhancements by Strain
作者: Chen, Kun-Ming
Huang, Guo-Wei
Chen, Bo-Yuan
Chiu, Chia-Sung
Hsiao, Chih-Hua
Liao, Wen-Shiang
Chen, Ming-Yi
Yang, Yu-Chi
Wang, Kai-Li
Liu, Chee Wee
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Annular layout;biaxial tensile strain;cutoff frequency;laterally diffused MOS (LDMOS);mechanical stress
公開日期: 1-四月-2012
摘要: The effects of mechanical stress on the dc and high-frequency performances of laterally diffused MOS (LDMOS) transistors with different layout structures were investigated by using the wafer bending method. A 3.1% peak cutoff frequency (f(T)) enhancement is achieved for the multifinger device under 0.051% biaxial tensile strain. For LDMOS with annular layout, the f(T) enhancement is increased to 3.7% due to the various channel directions. Our results suggest the strain technology can be adopted in LDMOS for RF applications. The transconductance and gate capacitance were also extracted to clearly demonstrate the f(T) variations.
URI: http://hdl.handle.net/11536/16080
ISSN: 0741-3106
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 4
結束頁: 471
顯示於類別:期刊論文


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  1. 000302232900002.pdf