標題: Evidence for a Very Small Tunneling Effective Mass (0.03m(0)) in MOSFET High-k (HfSiON) Gate Dielectrics
作者: Chen, Ming-Jer
Hsu, Chih-Yu
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Effective mass;effective oxide thickness (EOT);HfO2;HfSiON;high-k;metal gate;MOSFETs;tunneling
公開日期: 1-四月-2012
摘要: We have recently conducted experimental and modeling tasks on TaC/HfSiON/SiON n-type MOSFETs, leading to an effective mass of 0.03m(0) for 2-D electrons tunneling in high-k HfSiON dielectrics. In this letter, we present extra evidence obtained from complementary MOSFETs undergoing the same TaC/HfSiON/SiON processing, which shows that such a very small tunneling effective mass is existent not only for 3-D electrons but also for 2-D holes. This new finding is very important because it can substantially enhance the current understanding of gate tunneling leakage suppression in metal-gate high-k MOSFETs.
URI: http://hdl.handle.net/11536/16079
ISSN: 0741-3106
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 4
結束頁: 468
顯示於類別:期刊論文


文件中的檔案:

  1. 000302232900001.pdf