標題: CAVITY ENHANCEMENT OF RESONANT FREQUENCIES IN SEMICONDUCTOR-LASERS SUBJECT TO OPTICAL-INJECTION
作者: SIMPSON, TB
LIU, JM
HUANG, KF
TAI, K
CLAYTON, CM
GAVRIELIDES, A
KOVANIS, V
電子物理學系
Department of Electrophysics
公開日期: 1-Dec-1995
摘要: The injection of an optical signal into a semiconductor laser biased near or above the lasing threshold modifies the coupling between the free carriers and the intracavity field. The detuning between the frequency of the injected signal and the free-running oscillation frequency and the ratio of the photon lifetime to the carrier lifetime are key parameters in determining the enhancement of the carrier-field resonant coupling frequency and the stability of the output field. Experimental results using a vertical cavity surface emitting laser biased near threshold are in agreement with calculations using a lumped-element oscillator model.
URI: http://dx.doi.org/10.1103/PhysRevA.52.R4348
http://hdl.handle.net/11536/1607
ISSN: 2469-9926
DOI: 10.1103/PhysRevA.52.R4348
期刊: PHYSICAL REVIEW A
Volume: 52
Issue: 6
起始頁: 0
結束頁: 0
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