標題: A CMOS-Compatible Poly-Si Nanowire Device with Hybrid Sensor/Memory Characteristics for System-on-Chip Applications
作者: Chen, Min-Cheng
Chen, Hao-Yu
Lin, Chia-Yi
Chien, Chao-Hsin
Hsieh, Tsung-Fan
Horng, Jim-Tong
Qiu, Jian-Tai
Huang, Chien-Chao
Ho, Chia-Hua
Yang, Fu-Liang
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: nano-sensor fabrication;nanowire FET;nonvolatile memories;semiconductive sensors
公開日期: 1-四月-2012
摘要: This paper reports a versatile nano-sensor technology using "top-down" poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to 50 nm without use of extra lithography equipment, and exhibited superior device uniformity. These n type polysilicon nanowire FETs have positive pH sensitivity (100 mV/pH) and sensitive deoxyribonucleic acid (DNA) detection ability (100 pM) at normal system operation voltages. Specially designed oxide-nitride-oxide buried oxide nanowire realizes an electrically Vth-adjustable sensor to compensate device variation. These nanowire FETs also enable non-volatile memory application for a large and steady Vth adjustment window (>2 V Programming/Erasing window). The CMOS-compatible manufacturing technique of polysilicon nanowire FETs offers a possible solution for commercial System-on-Chip biosensor application, which enables portable physiology monitoring and in situ recording.
URI: http://hdl.handle.net/11536/16063
ISSN: 1424-8220
期刊: SENSORS
Volume: 12
Issue: 4
結束頁: 3952
顯示於類別:期刊論文


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