Title: Electronic structures and surface states of ZnO finite well structures
Authors: Lin, Kuo-Feng
Hsieh, Wen-Feng
Department of Photonics
Keywords: Electronic and electrical properties;II-VI semiconductor;Electronic structure
Issue Date: 2009
Abstract: Electronic band structures and surface states were investigated for ZnO finite wells or slabs grown along < 0001 > and < 1-100 > directions using tight binding representation. The dangling bonds on two end-surfaces caused surface bands for different directions grown slabs, of which the wavefunctions tend to localize at the end surfaces. The increasing splitting of the degenerate surface bands at the Gamma point was observed decreasing with the thickness of the nonpolar [1-100] slab. And, the quantum confinement effect is distinctively enhanced by the extra electron-field induced in the < 0001 > grown finite well with the polar end-surfaces.
URI: http://hdl.handle.net/11536/16060
ISSN: 1012-0394
Volume: 151
Begin Page: 208
End Page: 212
Appears in Collections:Conferences Paper