標題: Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress
作者: Lo, Wen-Hung
Chang, Ting-Chang
Tsai, Jyun-Yu
Dai, Chih-Hao
Chen, Ching-En
Ho, Szu-Han
Chen, Hua-Mao
Cheng, Osbert
Huang, Cheng-Tung
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 9-四月-2012
摘要: This letter studies the channel hot carrier stress (CHCS) behaviors on high dielectric constant insulator and metal gate HfO2/TiN p-channel metal-oxide-semiconductor field effect transistors. It can be found that the degradation is associated with electron trapping, resulting in G(m) decrease and positive Vth shift. However, Vth under saturation region shows an insignificant degradation during stress. To compare that, the CHC-induced electron trapping induced DIBL is proposed to demonstrate the different behavior of Vth between linear and saturation region. The devices with different channel length are used to evidence the trapping-induced DIBL behavior. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3697644]
URI: http://dx.doi.org/152102
http://hdl.handle.net/11536/16044
ISSN: 0003-6951
DOI: 152102
期刊: APPLIED PHYSICS LETTERS
Volume: 100
Issue: 15
結束頁: 
顯示於類別:期刊論文


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  1. 000303128000027.pdf