標題: Synthesis, Pore Morphology, and Dielectric Property of Mesoporous Low-k Material PSMSQ using a Reactive High-Temperature Porogen, TEPSS
作者: Chiu, S. -Y.
Hsu, H. L.
Che, M. L.
Leu, J.
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2011
摘要: A high-temperature reactive porogen, triethoxy(polystyrene) silane (TEPSS) (M-w=3,500 g/mole), suitable for late-porogen removal integration scheme has been synthesized in p-xylene via atom transfer radical polymerization. TEPSS was then grafted onto poly(methyl-silsesquioxane) (MSQ) matrix (k=2.9) to circumvent possible phase separation between matrix and porogen in the hybrid approach and porogen aggregation. Our results shows porous low-k MSQ films possess uniform pore size, 24 nm for porosity up to 40%, primarily due to low PDI and reactive porogen, and the dielectric constant is decreased to 2.37 at 40% porosity. In addition, less porogen aggregation was observed at porogen loading similar to 40 v%.
URI: http://hdl.handle.net/11536/15915
ISBN: 978-1-60768-215-8
ISSN: 1938-5862
期刊: SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 11
Volume: 35
Issue: 4
結束頁: 629
Appears in Collections:Conferences Paper


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