標題: Free-standing a-plane GaN substrates grown by HVPE
作者: Wu, Yin-Hao
Yeh, Yen-Hsien
Chen, Kuei-Ming
Yang, Yu-Jen
Lee, Wei-I
電子物理學系
Department of Electrophysics
關鍵字: Hydride vapor phase epitaxy;non-polar Gallium Nitride;Semiconducting III-V materials
公開日期: 2012
摘要: A-plane free-standing GaN was grown on a-plane GaN templates by HVPE. A-plane GaN templates were grown on r-plane sapphire by MOCVD with multilayer high-low-high temperature AlN buffer layers. A regrowth method was used for growing GaN through HVPE. First, GaN was grown on a-plane GaN templates, followed by separating the a-plane GaN film from r-plane sapphire using LLO. Then, the GaN films were regrown using HVPE. The resulting free-standing GaN contained some voids, which causes to release the stress.
URI: http://hdl.handle.net/11536/15893
http://dx.doi.org/82621Z
ISBN: 978-0-8194-8905-0
ISSN: 0277-786X
DOI: 82621Z
期刊: GALLIUM NITRIDE MATERIALS AND DEVICES VII
Volume: 8262
顯示於類別:會議論文


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  1. 000302556100040.pdf